SI6923DQ vishay siliconix new product document number: 70792 s-56941erev. b, 02-nov-98 www.vishay.com faxback 408-970-5600 2-1 p-channel 2.5-v (g-s) mosfet with schottky diode v ds (v) r ds(on) ( ) i d (a) 20 0.050 @ v gs = 4.5 v 3.5 20 0.085 @ v gs = 2.5 v 2.7 v ka (v) v f (v) diode forward voltage i f (a) 20 0.5 v @ 1 a 1.5 SI6923DQ d s s g 1 2 3 4 8 7 6 5 k a a a tssop-8 top view s g d k a
parameter symbol limit unit drain-source voltage (mosfet and schottky) v ds 20 v reverse voltage (schottky) v ka 20 v gate-source voltage (mosfet) v gs 12 continuous drain current ( t j = 150 c ) ( mosfet ) a, b t a = 25 c i d 3.5 a continuous drain current (t j = 150 c) (mosfet) a, b t a = 70 c i d 2.8 a pulsed drain current (mosfet) i dm 30 a continuous source current (mosfet diode conduction) a, b i s 1.25 a average foward current (schottky) i f 1.5 pulsed foward current (schottky) i fm 30 maximum power dissipation (mosfet) a, b t a = 25 c p 1.2 w maximum power dissipation (mosfet) a , b t a = 70 c p d 0.76 w maximum power dissipation (schottky) a, b t a = 25 c p d 1.0 w maximum power dissipation (schottky) a , b t a = 70 c 0.64 operating junction and storage temperature range t j , t stg 55 to 150 c
parameter device symbol typical maximum unit maximum junction - to - ambient (t 10 sec) a mosfet r 105 c/w m ax i mum j unc ti on- t o- a m bi en t (t 10 sec ) a schottky r thja 125 c/w maximum junction - to - ambient (t = steady state) a mosfet r thja 115 c/w m ax i mum j unc ti on- t o- a m bi en t (t = s t ea d y s t a t e ) a schottky 130 notes a. surface mounted on fr4 board. b. t 10 sec.
SI6923DQ vishay siliconix new product www.vishay.com faxback 408-970-5600 2-2 document number: 70792 s-56941erev. b, 02-nov-98
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